czt5551 surface mount npn silicon transistor description: the central semiconductor czt5551 type is an npn silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. marking: full part number maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 180 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 6.0 v continuous collector current i c 600 ma power dissipation p d 2.0 w operating and storage junction temperature t j, t stg -65 to +150 c thermal resistance ja 62.5 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =120v 50 na i cbo v cb =120v, t a =100c 50 a i ebo v eb =4.0v 50 na bv cbo i c =100a 180 v bv ceo i c =1.0ma 160 v bv ebo i e =10a 6.0 v v ce(sat) i c =10ma, i b =1.0ma 0.15 v v ce(sat) i c =50ma, i b =5.0ma 0.20 v v be(sat) i c =10ma, i b =1.0ma 1.00 v v be(sat) i c =50ma, i b =5.0ma 1.00 v sot-223 case sot-223 case r4 (1-march 2010) www.centralsemi.com
czt5551 surface mount npn silicon transistor electrical characteristics - continued: (t a =25c unless otherwise noted) symbol test conditions min max units h fe v ce =5.0v, i c =1.0ma 80 h fe v ce =5.0v, i c =10ma 80 250 h fe v ce =5.0v, i c =50ma 30 f t v ce =10v, i c =10ma, f=100mhz 100 300 mhz c ob v cb =10v, i e =0, f=1.0mhz 6.0 pf c ib v eb =0.5v, i c =0, f=1.0mhz 20 pf h fe v ce =10v, i c =1.0ma, f=1.0khz 50 200 nf v ce =5.0v, i c =200a, r s =10, f=10hz to 15.7khz 8.0 db lead code: 1) base 2) collector 3) emitter 4) collector marking: full part number sot-223 case - mechanical outline www.centralsemi.com r4 (1-march 2010)
|
